NMOS linear image sensor
NMOS linear image sensors are self-scanning photodiode arrays designed specifically for detectors used in multichannel spectroscopy. These image sensors feature a large photosensitive area, high UV sensitivity and little sensitivity degradation with UV exposure, wide dynamic range due to low dark current and high saturation charge, superior output linearity and uniformity, and also low power consumption.
CCD linear image sensor
CCD linear image sensors for spectrophotometry
Back-thinned type
Front-illuminated type
CCD linear image sensors for industry
TDI-CCD image sensor
Front-illuminated type
CMOS linear images sensor
CMOS linear image sensors for spectrophotometry
High sensitivity type
Variable integration time type
Standard type
CMOS linear image sensors for industry
Resin-sealed type package
High-speed readout type
High sensitivity type
Digital output type
Front-illuminated type CCD area image sensor
Front-illuminated type CCD area image sensors are low dark current and low noise CCDs ideal for scientific measurement instruments.
CMOS area image sensor
These are APS (active pixel sensor) type CMOS area image sensors with high sensitivity in the near infrared region. They include a timing generator, a bias generator, an amplifi er and an A/D converter, and offer all-digital I/O for easy handling.
Back-thinned type CCD area image sensor
Back-thinned type CCD area image sensors deliver high quantum efficiency (90% or more at the peak wavelength) in spectral range up to VUV region, and have great stability for UV region. Moreover these also feature low noise and are therefore ideal for low-light-level detection.
X-ray image sensor
With the CCD with a CsI type FOS (FOP with X-ray scintillator), the FOP functions as a shield, so X-ray damage on the CCD can be suppressed. In addition to FOS, FOP coupling is also possible. Note that products that employ GOS for the scintillator are also available as low cost types.
The TDI -CCD S7199-01 and S8658-01 can provide crosssectional
X-ray imaging of large objects through TDI operation. It can be used not only in X-ray radiography equipment but also for industrial inline non-destructive inspections.
The photodiode arrays with amplifiers that have a phosphor sheet affixed on the photosensitive area can be used in various types of inspection equipment such as inline industrial product inspection equipment and foreign matter inspection of canned and retort food.
Multichannel detector head
Image sensors have excellent performance characteristics, but more sophisticated electronics and signal processing are required for driving image sensors than when using single-element devices. To make it easier to use image sensors, Hamamatsu provides multichannel detector heads designed for CCD/NMOS/InGaAs image sensors. These multichannel detector heads operate with the dedicated controller or software for easy data acquisition and sensor evaluation and, can extract full performance from image sensors when installed in a measurement system.
Image Sensors for Near Infrared Region
InGaAs image sensors are designed for a wide range of applications in the near infrared region. Built-in CMOS ROIC readout circuit allows easy signal processing. These image sensors use a charge amplifier mode that provides a large output signal by integrating the charge, making them ideal for low -light-level detection.
Distance image sensors
These distance image sensors are designed to measure the distance to an object by TOF method. When used in combination with a pulse modulated light source, these sensors output phase difference information on the timing that the light is emitted and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain distance data.
Photodiode Arrays with Amplifier
Photodiode arrays with amplifier are a type of CMOS linear image sensor designed mainly for long area detection systems using an equal -magnification optical system. This sensor has two chips consisting of a photodiode array chip for light detection and a CMOS chip for signal processing and readout. A long, narrow image sensor can be configured by arranging multiple arrays in a row.
Back-thinned TDI
Back-thinned TDI (time delay integration)-CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the exposure of a moving object. The back-thinned structure ensures high quantum efficiency over a wide spectral range from the ultraviolet to the near infrared region (200 to 1100 nm).
FFT-CCD area image sensor
CCD area image sensors are semiconductor devices invented by Boyle and Smith at the AT&T Laboratory in 1970.
The CCD (Charge-Coupled Device) comes from operation/ function that charge stored in one area of the CCD is transferred (or coupled) to an adjacent area. Areas where the charge is stored are referred to as potential wells, and are created when an external voltage is applied to the gate electrodes. The struc- ture of a CCD is based upon a MOS (Metal Oxide Semiconduc- tor) capacitor (Figure 1-1). The gate electrodes (P1, P2 and P3) are usually made from a highly conductive material such as metal or polysilicon. The oxide layer is SiO2 (silicon dioxide) and the channel is a semiconductor.
Image Sensor
Back-thinned TDI (time delay integration)-CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the exposure of a moving object. The back-thinned structure ensures high quantum efficiency over a wide spectral range from the ultraviolet to the near infrared region (200 to 1100 nm).
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