APD

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APD

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The APD is a high-speed, high-sensitivity photodiode that internally multiplies photocurrent when reverse voltage is applied. The APD, having a signal multiplication function inside its element, achieves higher S/N than the PIN photodiode and can be used in a wide range of applications such as high-accuracy rangefinders and low-light-level detection that use scintillators. Though the APD can detect lower level light than the PIN photodiode, it does require special care and handling such as the need for higher reverse voltage and more detailed consideration of its temperature- dependent gain characteristics.

◎Si APD

Type		Recommended wavelength (nm)	Peak sensitivity wavelength (nm)	Type no.	Package	Features	Applications
Short wavelength type	Low- bias operation	200 to 650	620	S12053 series, etc.	Metal	Enhanced sensitivity in the UV to visible region	1.Low-light-level detection 2.Analytical instruments
	Low terminal capacitance	320 to 650	600	S8664-K series	Metal
				S8664-55/-1010	Ceramic
				S8550 - 02	Ceramic
Near infrared type	Low- bias operation	600 to 800	800	S12023 series, etc.	Metal	High sensitivity in the near IR region and low bias voltage (operating voltage)	1.FSO 2.Optical rangefinders 3.Optical fiber communication
	Low- bias operation	600 to 800	800	S10341 series	Surface mount type	Compact, thin, low cost	1.Optical rangefinders 2.Laser radars 3.FSO
	Low temperature coefficient	600 to 800	800	S12062 series, etc.	Metal	Low temperature coefficient of the bias voltage, easy gain adjustment	1.FSO 2.Optical rangefinders 3.Optical fiber communication
	900 nm band, low terminal capacitance	800 to 1000	860	S12092 series, etc.	Metal	Enhanced sensitivity in the 900 nm band	1.Optical rangefinders 2.Laser radars
	1000 nm band/ high sensitivity	900 to 1150	960	S11519 series	Metal	Enhanced sensitivity in the 1000 nm band, low bias voltage (operating voltage)	1.YAG laser detection, etc.

◎APD module

Type	Type no.	Features
Standard type	C12702 series	Contains near infrared type or short wavelength type APD. FC/SMA fiber adapters are also available.
High-sensitivity type	C12703 series	High gain type for low-light-level detection
High-stability type	C10508 - 01	Digital temperature compensation type, high stability APD module
High-speed type	C5658	Can be used over a wide frequency range (up to 1 GHz)

Principle of avalanche multiplication

The photocurrent generation mechanism of the APD is the same as that of a normal photodiode. When light enters a photo- diode, electron-hole pairs are generated if the light energy is higher than the band gap energy. The ratio of the number of gener- ated electron-hole pairs to the number of incident photons is defined as the quantum efficiency (QE), expressed in percent (%). The mechanism by which carriers are generated inside an APD is the same as in a photodiode, but the APD is different from a photodiode in that it has a function to multiply the generated carriers. When electron-hole pairs are generated in the depletion layer of an APD with a reverse voltage applied to the PN junction, the electric field causes the electrons to drift toward the N+ side and the holes to drift toward the P+ side. The higher the electric field strength, the higher the drift speed of these carriers. However, when the electric field reaches a certain level, the carriers are more likely to collide with the crystal lattice so that the drift speed becomes saturated at a certain speed. If the electric field is increased even further, carriers that es- caped the collision with the crystal lattice will have a great deal of energy. When these carriers collide with the crystal lattice, a phenomenon takes place in which new electron-hole pairs are generated. This phenomenon is called ionization. These electron-hole pairs then create additional electron-hole pairs, which generate a chain reaction of ionization.

◎Principle of APD operation

◎Spectral response (Si APD)

◎Cutoff frequency vs. recommended wavelength

◎Sensitivity vs. response speed (APD modules)

Short wavelength type Si APD

These are short wavelength Si APDs with enhanced sensitivity in the UV to visible region. They offer high gain, high sensitivity, and low noise in the short wavelength region.
They are suitable for applications such as low-light-level measurement and analytical instruments.

●Low-bias operation

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. ID=100 μA (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Rise time RL=50 Ω (ns)	Terminal capacitance (pF)	Gain λ=650 nm	Package
S12053- 02	ϕ0.2	200 to 1000	200	0.14	900	0.4	2	50	TO-18
S12053- 05	ϕ0.5				400	0.9	5
S12053-10	ϕ1.0				250	1.5	15
S9075	ϕ1.5				100	3.5	30		TO-5
S5344	ϕ3.0				25	14	120		TO-5
S5345	ϕ5.0				8	45	320		TO-8

◎Spectral response	◎Quantum efficiency vs. wavelength	◎Gain vs. reverse voltage

●Low terminal capacitance

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. ID=100 μA (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Rise time RL=50 Ω (ns)	Terminal capacitance (pF)	Gain λ=420 nm	Package
S8664 - 02K	ϕ0.2	320 to 1000	500	0.78	700	0.5	0.8	50	TO-5
S8664 - 05K	ϕ0.5				680	0.52	1.6
S8664 -10K	ϕ1.0				530	0.66	4
S8664 -20K	ϕ2.0				280	1.3	11
S8664 - 30K	ϕ3.0				140	2.5	22		TO-8
S8664 - 50K	ϕ5.0				60	6	55		TO-8
S8664 - 55	5 × 5				40	9	80		Ceramic
S8664 -1010	10 × 10				11	32	270		Ceramic
S11051-20	ϕ2.0	266			250	1.4	11		TO-8

●4 × 8 element array

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Terminal capacitance (pF)	Gain λ=420 nm	Package
S8550 - 02	1.6 × 1.6 (× 32 elements)	320 to 1000	500	0.78	250	10 (per element)	50	Ceramic

Type no.

Effective photosensitive area
(mm)

Spectral response range
(nm)

Breakdown voltage max.
(V)

Temp. coefficient of breakdown voltage

(V/°C)

Cutoff frequency RL=50 Ω
(MHz)

Terminal capacitance

(pF)

Gain
λ=420 nm

Package

S8550 - 02

1.6 × 1.6
(× 32 elements)

320 to 1000

500

0.78

250

10
(per element)

Ceramic

◎Spectral response	◎Quantum efficiency vs. wavelength	◎Gain vs. reverse voltage
	[S8664 series, S8550-02]

	[S11051-20]

Near infrared type Si APD

●Low-bias operation

These are near infrared Si APDs that operate with low bias voltage. Since high gain can be attained with a bias voltage of 200 V or less, they are suitable for applications such as FSO, laser radar, and optical fiber communication.

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. ID=100 μA (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Terminal capacitance (pF)	Gain λ=800 nm	Package
S12023- 02	ϕ0.2	400 to 1000	200	0.65	1000	1	100	TO-18
S12023- 05	ϕ0.5				900	2
S12051
S12086
S12023-10	ϕ1.0				600	6
S12023-10A	ϕ1.0				600	6
S3884	ϕ1.5				400	10		TO-5
S2384	ϕ3.0				120	40	60	TO-5
S2385	ϕ5.0				40	95	40	TO-8

●Surface mount type

These are low cost, small size Si APD with a surface-mount plastic package suitable for mass production.

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Terminal capacitance (pF)	Gain λ=800 nm	Package
S10341- 02	ϕ0.2	400 to 1000	200	0.65	1000	1	100	Plastic
S10341- 05	ϕ0.5	900	2
S12427-02	ϕ0.2	120	0.42	1500	1.2

Type no.

Effective photosensitive area
(mm)

Spectral response range
(nm)

Breakdown voltage max.
(V)

Temp. coefficient of breakdown voltage

(V/°C)

Cutoff frequency RL=50 Ω
(MHz)

Terminal capacitance

(pF)

Gain
λ=800 nm

Package

S10341- 02

ϕ0.2

400 to 1000

200

0.65

1000

100

Plastic

S10341- 05

ϕ0.5

900

S12427-02

ϕ0.2

120

0.42

1500

1.2

◎Spectral response	◎Quantum efficiency vs. wavelength	◎Gain vs. reverse voltage
[S12023/S10341, S12051, S12086, S3884, S2384, S2385]	[S12023/S10341, S12051, S12086, S3884, S2384, S2385]	[S12023/S10341, S12051, S12086, S3884, S2384, S2385]

[S12427-02]	[S12427-02]	[S12427-02]

●Low temperature coefficient

These are near infrared Si APDs featuring low temperature coefficient of the bias voltage. They produce stable gain over a wide temperature range. They are suitable for applications such as FSO, laser radar, and optical fi ber communication.

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. ID=100 μA (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Terminal capacitance (pF)	Gain λ=800 nm	Package
S12060 - 02	ϕ0.2	400 to 1000	300	0.4	1000	1	100	TO-18
S12060 - 05	ϕ0.5				900	2.5
S12060 -10	ϕ1.0				600	6
S6045 - 04	ϕ1.5				350	12		TO-5
S6045 - 05	ϕ3.0				80	50	60	TO-5
S6045 - 06	ϕ5.0				35	120	40	TO-8

◎Spectral response	◎Quantum efficiency vs. wavelength	◎Gain vs. reverse voltage

●900 nm band, low terminal capacitance

This series is used in laser radar and other applications. It features a gradual curve of gain versus reverse voltage curve, providing stable operation.

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. ID=100 μA (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Terminal capacitance (pF)	Gain λ=900 nm	Package
S12092- 02	ϕ0.2	440 to 1100	350	1.85	400	0.4	100	TO-18
S12092- 05	ϕ0.5				400	0.7		TO-18
S9251-10	ϕ1.0				380	1.9		TO-5
S9251-15	ϕ1.5				350	3.6		TO-5

●Surface mount type

The small, thin liadless package allows reducing the mounting area on a printed circuit board. Teh S12926-02F and S12926-05F have an on-chip filter matched to a 900 nm light source.

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Terminal capacitance (pF)	Gain λ=800 nm	Package
S12926 - 02	ϕ0.2	400 to 1150	200	1.1	600	0.6	100	Plastic
S12926 - 02F	ϕ0.2	850 to 950				0.6
S12926 - 05	ϕ0.5	400 to 1150				1.3
S12926 - 05F	ϕ0.5	850 to 950				1.3

◎Spectral response		◎Gain vs. reverse voltage
[S12426/S12926 series]	[S9251 series]	[S12426/S12926 series]

●1000 nm band, high sensitivity

The S11519 series incorporates MEMS technology to enhance the sensitivity in the near IR region for YAG laser (1.06 μm) detection.

Type no.	Effective photosensitive area (mm)	Spectral response range (nm)	Breakdown voltage max. ID=100 μA (V)	Temp. coefficient of breakdown voltage (V/°C)	Cutoff frequency RL=50 Ω (MHz)	Terminal capacitance (pF)	Gain λ=890 nm	Package
S11519 -10	ϕ1.0	600 to 1150	500	1.7	400	2	100	TO-5
S11519 - 30	ϕ3.0	230	12	TO-8

Type no.

Effective photosensitive area
(mm)

Spectral response range
(nm)

Breakdown voltage max.
ID=100 μA (V)

Temp. coefficient of breakdown voltage

(V/°C)

Cutoff frequency RL=50 Ω
(MHz)

Terminal capacitance

(pF)

Gain
λ=890 nm

Package

S11519 -10

ϕ1.0

600 to 1150

500

1.7

400

100

TO-5

S11519 - 30

ϕ3.0

230

TO-8

◎Spectral response	◎Quantum eiifciency vs. wavelength	◎Gain vs. reverse voltage

APD modules

●Standard type

The APD module consists of an amplifier and bias power supply assembled in a compact form to facilitate the use of the Si APD. Running on a +5 V power supply, it can be used for a variety of light detection applications up to 100 MHz of frequency bandwidth.

Near infrared type
Features	Applications
•Peak sensitivity wavelength: 800 nm	•Si APD evaluation
•Wide bandwidth	•FSO
•Optical fiber adapters are also available (sold separately).	•Barcode readers
	•Laser radars
	•Optical rangefinders
	•Optical communication

Type no.	Effective* photosensitive area (mm)	Built-in APD	Cutoff frequency	Photoelectric conversion sensitivity M=30, λ=800 nm (V/W)	Minimum detection limit M=30, λ=800 nm (nW rms)	Temperature stability of gain 25 ± 10 °C (%)	Supply voltage (V)
Low	High
C12702- 03	ϕ1.0	S12023-10	4 kHz	100 MHz	-6.8 × 104	3	±2.5	+5
C12702- 04	ϕ3.0	S2384	80 MHz	-2.3 × 104	3.6

Type no.

Effective* photosensitive area
(mm)

Built-in APD

Cutoff frequency

Photoelectric conversion sensitivity
M=30, λ=800 nm (V/W)

Minimum detection limit
M=30, λ=800 nm
(nW rms)

Temperature stability of gain 25 ± 10 °C
(%)

Supply voltage

(V)

Low

High

C12702- 03

ϕ1.0

S12023-10

4 kHz

100 MHz

-6.8 × 104

±2.5

C12702- 04

ϕ3.0

S2384

80 MHz

-2.3 × 104

3.6

Short wavelength type
Features	Applications
•Peak sensitivity wavelength: 620 nm	•Si APD evaluation
•Wide bandwidth	•Film scanners
•Optical fiber adapters are also available (sold separately).	•Laser monitoring

Type no.	Effective* photosensitive area (mm)	Built-in APD	Cutoff frequency	Photoelectric conversion sensitivity M=30, λ=620 nm (V/W)	Minimum detection limit M=30, λ=620 nm (nW rms)	Temperature stability of gain 25 ± 10 °C (%)	Supply voltage (V)
Low	High
C12702-11	ϕ1.0	S12053-10	4 kHz	100 MHz	-2.5 × 104	5	±2.5	+5
C12702-12	ϕ3.0	S5344	40 MHz	-1.9 × 104	6.3

Type no.

Effective* photosensitive area
(mm)

Built-in APD

Cutoff frequency

Photoelectric conversion sensitivity
M=30, λ=620 nm (V/W)

Minimum detection limit
M=30, λ=620 nm
(nW rms)

Temperature stability of gain 25 ± 10 °C
(%)

Supply voltage

(V)

Low

High

C12702-11

ϕ1.0

S12053-10

4 kHz

100 MHz

-2.5 × 104

±2.5

C12702-12

ϕ3.0

S5344

40 MHz

-1.9 × 104

6.3

●High-sensitivity type

These are high-gain APD modules suitable for low-light-level detection. They can be used for DC light detection.

Features	Applications
•Low-light-level detection	•Si APD evaluation
•DC light detection	•Fluorescence measurement
•High gain	•Barcode readers
	•Particle counters
	•Film scanners

Type no.	Effective* photosensitive size (mm)	Internal APD	Cutoff frequency	Photoelectric conversion sensitivity M=30, λ=800 nm (V/W)	Minimum detection limit M=30, λ=800 nm (pW rms)	Temperature stability of gain 25 ± 10 °C (%)	Supply voltage (V)
Low	High
C12703	ϕ1.5	S3884	DC	10 MHz	1.50 × 106	630	±2.5	±12
C12703-01	ϕ3.0	S2384	100 kHz	-1.50 × 108	6.3

Type no.

Effective* photosensitive size
(mm)

Internal APD

Cutoff frequency

Photoelectric conversion sensitivity
M=30, λ=800 nm (V/W)

Minimum detection limit
M=30, λ=800 nm
(pW rms)

Temperature stability of gain 25 ± 10 °C
(%)

Supply voltage

(V)

Low

High

C12703

ϕ1.5

S3884

10 MHz

1.50 × 106

630

±2.5

±12

C12703-01

ϕ3.0

S2384

100 kHz

-1.50 × 108

6.3

●High-stability type

The C10508-01 consists of an APD, current-voltage converter, high-voltage power supply circuit as well as a microcontroller for adjusting the APD gain and controlling temperature compensation with high accuracy. This makes it easy to adjust the APD gain and even at high gain, stable detection is possible even under temperature fluctuating conditions.

Features	Applications
•Gain: adjustable by switch or PC command	•Si APD evaluation
•Gain temperature stability: ±5% or less (Gain=250, Ta=0 °C to +40 °C)	•Power meters
•Easy handling: only ±5 V power supply	•Low-light-level detection

Type no.	Effective* photosensitive size (mm)	Internal APD	Cutoff frequency	Photoelectric conversion sensitivity M=250, λ=800 nm (V/W)	Minimum detection limit M=250, λ=800 nm (pW rms)	Temperature stability of gain 0 to 40 °C (%)	Supply voltage (V)
Low	High
C10508 - 01	ϕ1.0	S12023-10	DC	10 MHz	1.25 × 107	63	±5.0 max.	±5

Type no.

Effective* photosensitive size
(mm)

Internal APD

Cutoff frequency

Photoelectric conversion sensitivity
M=250, λ=800 nm (V/W)

Minimum detection limit
M=250, λ=800 nm
(pW rms)

Temperature stability of gain 0 to 40 °C
(%)

Supply voltage

(V)

Low

High

C10508 - 01

ϕ1.0

S12023-10

10 MHz

1.25 × 107

±5.0 max.

±5

* Area in which a typical gain can be obtained.

●FC/SMA fiber adapter (sold separately)

FC or SMA fiber adapters can be attached to the following APD modules to allow FC or SMA optical fiber cables to be connected to the modules.

APD module	FC fiber adapter	SMA fiber adapter
C12702- 03	A8407-18	A8424 -18
C12702-04	A8407-05A	A8424 - 05A
C12702-11	A8407-18	A8424 -18
C12702-12	A8407- 05A	A8424 - 05A
C12703	A8407- 05	A8424 - 05
C12703-01	A8407-05A	A8424 - 05A
C10508 -01	A12855-01	A12855 -02

●High-speed type

This device can be used in a wide frequency range (up to 1 GHz)

Features	Applications
•High-speed light detection	•OTDR
•Flat frequency characteristics	•Optical communication
•Compact and lightweight	• Laser radars
•Single power supply operation	•FSO
	•Optical rangefinders

Type no.	Effective*1 photosensitive size (mm)	Internal APD	Cutoff frequency	Photoelectric conversion sensitivity M=100, λ=800 nm (V/W)	Minimum detection limit M=100, λ=800 nm (nW rms)	Temperature stability of gain 25 ± 10 °C (%)	Supply voltage (V)
Low	High
C5658	ϕ0.5	S12023- 05	50 kHz	1 GHz	2.50 × 105	16	±5.0	+12

Type no.

Effective*1 photosensitive size
(mm)

Internal APD

Cutoff frequency

Photoelectric conversion sensitivity
M=100, λ=800 nm (V/W)

Minimum detection limit
M=100, λ=800 nm
(nW rms)

Temperature stability of gain 25 ± 10 °C
(%)

Supply voltage

(V)

Low

High

C5658

ϕ0.5

S12023- 05

50 kHz

1 GHz

2.50 × 105

±5.0

+12

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