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InGaAs Photodiode

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Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high sensitivity, and low noise over a spectral range from 0.5 μm to 2.6 μm. InGaAs photodiodes are used in a wide variety of applications ranging from optical communications to chemical analysis and measurement fields. Hamamatsu provides a wide range of products in different packages including metal, ceramic and surface mount packages as well as linear and area image sensors, and infrared detector modules with built-in preamplifiers.

Application examples

InGaAs PIN photodiodes

Type		Type no.	Radiation thermo-meter	Moisture meter	Gas analysis	Spectro-photometry	Laser monitor	DWDM monitor	Optical power meter	Optical commu-nication
Short-wavelength enhanced type		G10899 series				●
		G12180 series	●	●		●	●		●	●
		G11193 series							●
		G8941 series					●		●
Standard type	COB	G11777-003P					●		●
	ROSA	G12072-54								●
	Array	G6849series							●
		G7150/G7151-16				●
		G8909-01						●
		G12430 series				●
Long wavelength type	to 1.9 μm	G12181 series	●	●	●	●			●
	to 2.1 μm	G12182 series	●	●	●	●			●
	to 2.6 μm	G12183 series	●		●	●			●

InGaAs APD

Type	Type no.	Radiation thermo-meter	Moisture meter	Gas analysis	Spectro-photometry	Laser monitor	DWDM monitor	Optical power meter	Optical commu-nication	Distance measure-ment
APD	G8931 series								●	●

InGaAs linear image sensors

Type		Type no.	Thermometer	Multichannel spectro-photometry	Non- destructive inspection	Foreign object screening	DWDM monitor	OCT	Optical spectrum analyzer
Standard type		G92XX series	●	●	●		●		●
		G9494 series			●	●
		G10768 series		●	●	●		●
Back-illuminated type		G11135 series			●	●
Back-illuminated type		G11620 series	●	●	●				●
Long wavelength type	to 1.85μm	G9205 series	●	●	●
	to 2.05μm	G9206-256W	●	●	●
	to 2.15μm	G9206-02/-512W	●	●	●
	to 2.25μm	G9207-256W	●	●	●
	to 2.55μm	G9208 series	●	●	●

InGaAs area image sensors

Type	Type no.	Hyperspectral imaging	Thermal image monitor	Laser beam profiler	Near infrared image detection	Foreign object screening
Standard type	G11097-0606S	●	●	●	●	●
	G11097-0707S	●	●	●	●	●
	G12460-0606S	●	●	●	●	●
	G12242-0707W	●	●	●	●	●
	G12242-0909W	●	●	●	●	●

InGaAs PIN photodiode detects the temperature at the bottom of a frying pan.

InGaAs PIN photodiode is used to detect the level of near infra- red light passing through an optical fiber, etc.

InGaAs linear image sensor is used in some of our mini-spectrometers.

InGaAs APD detects the distance to an object with high speed and accuracy.

Grain sorters irradiate light onto the falling grains and detect the transmitted light to sort out unwanted grains from good ones. (InGaAs linear image sensor detects near infrared light, and CCD detects visible light.)

A hyperspectral image of the ground environment is to be obtained by using an InGaAs area image sensor from a helicopter, etc.

InGaAs PIN photodiodes, InGaAs APD

Short-wavelength enhanced type InGaAs PIN photodiodes

The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard
InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
to 0.5 μm on the shorter wavelength side. A wide spectral range can be detected with a single detector.

Features

•Wide spectral response range

•Low noise, low dark current

•Large photosensitive area available

Application

•Spectrophotometry

•Radiation thermometers

Type no.	Cooling	Photo-sensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photosensitivity S		Dark current ID VR=1 V (nA)	Cutoff frequency fc VR=1 V (MHz)	Package
					λ=0.65μm (A/W)	λ=λp (A/W)
G10899-003K	Non-cooled	ϕ0.3	0.5 to 1.7	1.55	0.15	0.85	0.3	300	TO-18
G10899-005K		ϕ0.5					0.5	150
G10899-01K		ϕ1					1	45
G10899-02K		ϕ2					5	10	TO-5
G10899-03K		ϕ3					15	5	TO-5

Standard type InGaAs PIN photodiodes

InGaAs PIN photodiodes have large shunt resistance and low noise. A wide variety of packages are available including highly reliable
metal types and surface mount types.

Features

•Low noise, low dark current

•Various photosensitive areas available

Applications

•Laser monitor

•Optical measurement instruments

•Optical communications

Metal package

Type no.	Cooling (measurement condition)	Photo-sensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo- sensitivity S λ=λp (A/W)	Dark current ID VR=1V (nA)	Cutoff frequency fc (MHz)	Package
G12180-003A	Non-cooled (Ta=25 °C)	ϕ0.3	0.9 to 1.7	1.55	1.1	0.1^*1	600 (VR=5 V)	TO-18
G12180-005A		ϕ0.5				0.15^*1	200 (VR=5 V)
G12180-010A		ϕ1				0.8^*1	60 (VR=5 V)
G12180-020A		ϕ2				1.5	13 (VR=1 V)	TO-5
G12180-030A		ϕ3				2.5	7 (VR=1 V)	TO-5
G12180-050A		ϕ5				5	3 (VR=1 V)	TO-8
G8370-81^*3		ϕ1				1	35 (VR=1 V)	TO-18
G8370-82^*3		ϕ2				5	4 (VR=1 V)
G8370-83^*3		ϕ3				15	2 (VR=1 V)	TO-5
G8370-85^*3		ϕ5				25^*4	0.6 (VR=0 V)	TO-8
G12180-110A	One-stage TE-cooled (Td*2 = -10 °C)	ϕ1	0.9 to1.67		0.95	0.07	40 (VR=1 V)	TO-8
G12180-120A		ϕ2				0.3	13 (VR=1 V)
G12180-130A		ϕ3				1	7 (VR=1 V)
G12180-150A		ϕ5				2.5	3 (VR=1 V)
G12180-210A	Two-stage TE-cooled (Td=-20 °C)	ϕ1	0.9 to 1.65			0.03	40 (VR=1 V)
G12180-220A		ϕ2				0.15	13 (VR=1 V)
G12180-230A		ϕ3				0.5	7 (VR=1 V)
G12180-250A		ϕ5				1.2	3 (VR=1 V)
G6854-01	Non-cooled (Ta=25 °C)	ϕ0.08	0.9 to 1.7			0.08^*1	2000 (VR=5 V)	TO-18 with CD lens

*1: VR=5 V *2: Element temperature *3: Low PDL (polarization dependence loss) type *4: VR=0.1 V

Ceramic package

Type no.	Photosensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo-sensitivity S λ=λp (A/W)	Dark current ID VR=5V (nA)	Cutoff frequency fc VR=5 V (MHz)	Package
G8370-10	ϕ10	0.9 to 1.7	1.55	0.95	200 (VR=10 mV)	0.1 (VR=0 V)



G11193-02R	ϕ0.2			1	0.04	1000	Surface mount type


G11193-03R	ϕ0.3				0.1	500


G8941-01	ϕ1	0.9 to 1.7		0.95	1	35	Surface mount type


G8941-02	ϕ0.5				0.5	200


G8941-03	ϕ0.3				0.3	400

COB (chip on board) package

Type no.	Photosensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo-sensitivity S λ=λp (A/W)	Dark current ID VR= 5V (nA)	Cutoff frequency fc VR= 5V (MHz)	Package
G11777-003P	ϕ0.3	0.9 to 1.7	1.55	0.95	0.1	500	Surface mount type (Ultra-compact type)

Type no.

Photosensitive area
(mm)

Spectral response range
λ
(μm)

Peak sensitivity wavelength
λp
(μm)

Photo-sensitivity
S
λ=λp
(A/W)

Dark current
ID
VR= 5V
(nA)

Cutoff frequency

fc
VR= 5V
(MHz)

Package

G11777-003P

ϕ0.3

0.9 to 1.7

1.55

0.95

0.1

500

Surface mount type
(Ultra-compact type)

Photodiode arrays

Type no.	Photosensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo-sensitivity S λ=λp (A/W)	Dark current ID VR= 5V (nA)	Cutoff frequency fc VR= 5V (MHz)	Package
G6849	ϕ2 (quadrant)	0.9 to 1.7	1.55	0.95	0.5 (VR=1 V)	30	TO-5




G6849-01	ϕ1 (quadrant)				0.15 (VR=1 V)	120


G7150-16	0.45 × 1.0 (× 16-element)				5 (VR=1 V)	30	Ceramic



G7151-16	0.08 × 0.2 (× 16-element)				0.2 (VR=1 V)	300


G8909-01	ϕ0.08 (× 40-element)				0.02 (VR=5 V)	1000 (VR=5 V)


G12430-016D	0.45 × 1.0 (× 16-element)				0.5 (VR=1 V)	30


G12430-032D	0.2 × 1.0 (× 32-element)				0.25 (VR=1 V)	60


G12430-046D	0.2 × 1.0 (× 46-element)				0.25 (VR=1 V)	60


G12430-016D	0.45 × 1.0 (× 16-element)				0.5 (VR=1 V)	30


G12430-032D	0.2 × 1.0 (× 32-element)				0.25 (VR=1 V)	60


G12430-046D	0.2 × 1.0 (× 46-element)				0.25 (VR=1 V)	60

ROSA

Type no.	Wavelength band (μm)	Responsivity R (A/W)	Data rate (Gbps)	Minimum receivable sensitivity Pmin (dBm)	Maximum receivable sensitivity Pmax (dBm)	Transimpedance Tz (kΩ)	Optical return loss ORL min. (dB)
G12072-54	1.31	0.8	8.5 to 11.3	-19.5	5	2.25 (Single end)	12

Type no.

Wavelength band
(μm)

Responsivity
R
(A/W)

Data rate
(Gbps)

Minimum receivable sensitivity
Pmin
(dBm)

Maximum receivable sensitivity
Pmax
(dBm)

Transimpedance
Tz
(kΩ)

Optical return loss ORL
min.
(dB)

G12072-54

1.31

0.8

8.5 to 11.3

-19.5

2.25

(Single end)

Pigtail/receptacle type (InGaAs PIN photodiodes with preamp)

Type no.	Photo-sensitivity S (V/mW)	Cutoff frequency fc (GHz)	Minimum receivable sensitivity Pmin (dBm)	Maximum receivable sensitivity Pmax (dBm)	Transimpedance Tz (kΩ)	Optical return loss ORL min. (dB)	Package
G9821-22	1.5	2.1	-25.5	+1 min.	1.8 (single end)	12	FC board receptacle
G9821-22							FC board receptacle
G9821-32							FC panel receptacle
G9821-32							FC panel receptacle
G9822-11						27	Pigtail coaxial SC
G9822-11							Pigtail coaxial SC
G9822-12							Pigtail coaxial FC
G9822-12							Pigtail coaxial FC

Pigtail/receptacle type (InGaAs PIN photodiodes)

Type no.	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo- sensitivity S λ=1.55 μm (A/W)	Dark current ID VR=5V (pA)	Cutoff frequency fc VR=5V (GHz)	Package
G8195-11	0.9 to 1.7	1.55	0.95	20	2	Pigtail coaxial SC
G8195-12						Pigtail coaxial FC
G9801-22						FC board receptacle
G9801-32						FC panel receptacle

Long wavelength type InGaAs PIN photodiodes

These are InGaAs PIN photodiodes whose spectral response range extends up to 2.6 μm. Three groups are available with different
peak sensitivity wavelengths of 1.75 μm, 1.95 μm, and 2.3 μm. Thermoelectrically cooled, low noise types are also available.

Peak sensitivity wavelength 1.75 μm

Type no.	Cooling (measurement condition)	Photo-sensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo-sensitivity S λ=λp (A/W)	Dark current ID VR=0.5V (nA)	Cutoff frequency fc VR=0V (MHz)	Package
G12181-003K	Non-cooled (Ta=25 °C)	ϕ0.3	0.9 to 1.9	1.75	1.1	1	90	TO-18
G12181-005K		ϕ0.5				3	35
G12181-010K		ϕ1				10	10
G12181-020K		ϕ2				50	2.5	TO-5
G12181-030K		ϕ3				100	1.5	TO-5
G12181-103K	One-stage TE-cooled (Td=-10 °C)	ϕ0.3	0.9 to 1.87			0.1	140	TO-8
G12181-105K		ϕ0.5				0.3	50
G12181-110K		ϕ1				1	16
G12181-120K		ϕ2				5	3.5
G12181-130K		ϕ3				10	1.8
G12181-203K	Two-stage TE-cooled (Td=-20 °C)	ϕ0.3	0.9 to 1.85			0.05	150	TO-8
G12181-205K		ϕ0.5				0.15	53
G12181-210K		ϕ1				0.5	17
G12181-220K		ϕ2				2.5	3.7
G12181-230K		ϕ3				5	1.9

Peak sensitivity wavelength 1.95 μm

Type no.	Cooling (measurement condition)	Photo-sensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo-sensitivity S λ=λp (A/W)	Dark current ID VR=0.5V (nA)	Cutoff frequency fc VR=0V (MHz)	Package
G12182-003K	Non-cooled (Ta=25 °C)	ϕ0.3	0.9 to 2.1	1.95	1.2	10	90	TO-18
G12182-005K		ϕ0.5				20	35
G12182-010K		ϕ1				100	10
G12182-020K		ϕ2				500	2.5	TO-5
G12182-030K		ϕ3				1000	1.5	TO-5
G12182-103K	One-stage TE-cooled (Td=-10 °C)	ϕ0.3	0.9 to 2.07			1	140	TO-8
G12182-105K		ϕ0.5				3	50
G12182-110K		ϕ1				10	16
G12182-120K		ϕ2				50	3.5
G12182-130K		ϕ3				100	1.8
G12182-203K	Two-stage TE-cooled (Td=-20 °C)	ϕ0.3	0.9 to 2.05			0.5	150	TO-8
G12182-205K		ϕ0.5				1.5	53
G12182-210K		ϕ1				5	17
G12182-220K		ϕ2				25	3.7
G12182-230K		ϕ3				50	1.9

Peak sensitivity wavelength 2.3 μm

Type no.	Cooling (measurement condition)	Photo-sensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo-sensitivity S λ=λp (A/W)	Dark current ID VR=0.5V (nA)	Cutoff frequency fc VR=0V (MHz)	Package
G12183-003K	Non-cooled (Ta=25 °C)	ϕ0.3	0.9 to 2.6	2.3	1.3	0.4	50	TO-18
G12183-005K		ϕ0.5				1	20
G12183-010K		ϕ1				3	6
G12183-020K		ϕ2				10	1.5	TO-5
G12183-030K		ϕ3				30	0.8	TO-5
G12183-103K	One-stage TE-cooled (Td=-10 °C)	ϕ0.3	0.9 to 2.57			0.12	70	TO-8
G12183-105K		ϕ0.5				0.3	25
G12183-110K		ϕ1				0.9	7
G12183-120K		ϕ2				3	2
G12183-130K		ϕ3				9	0.9
G12183-203K	Two-stage TE-cooled (Td=-20 °C)	ϕ0.3	0.9 to 2.55			0.085	75	TO-8
G12183-205K		ϕ0.5				0.21	28
G12183-210K		ϕ1				0.65	8
G12183-220K		ϕ2				2.1	2.3
G12183-230K		ϕ3				6	1

InGaAs APD

These are InGaAs APDs designed for distance measurement, FSO, low-light-detection, and optical communication, etc. The

G8931-20 of large photosensitive area ϕ0.2 mm is also available.

Type no.	Cooling	Photosensitive area (mm)	Spectral response range λ (μm)	Peak sensitivity wavelength λp (μm)	Photo-sensitivity S λ=1.55 M=1 (A/W)	Dark current ID VR=VBR*0.9 (nA)	Cutoff frequency fc M=10 (GHz)	Package
G8931-04	Non-cooled	ϕ0.04	0.95 to 1.7	1.55	0.9	40	4	TO-18
G8931-20	Non-cooled	ϕ0.2	0.95 to 1.7	1.55	0.9	150	0.9	TO-18

InGaAs image sensor

InGaAs linear image sensors

InGaAs linear image sensors are comprised of an InGaAs photodiode array with high sensitivity in the near infrared region,

charge amplifier arrays, an offset compensation circuit, a shift register, and a timing generator. The signal from each pixel is read

out in charge integration mode. The G11135/G11620 series use a back-illuminated structure to allow signal readout from a single

video line.

Standard type

Type no.	Cooling (measurement condition)	Pixel pitch (μm)	Number of pixels	Photosensitive area (mm × mm)	Spectral response range λ (μm)	Photo- sensitivity S λ=λp (A/W)	Dark current ID Ta=25 °C (pA)	Defective pixels max. (%)
G9201-256S	One-stage TE-cooled (Td=-10 °C)	50	256	12.8 × 0.25	0.9 to 1.67	0.95	2	0
G9202-512S	One-stage TE-cooled (Td=-10 °C)	25	512	12.8 × 0.25	0.9 to 1.67		1
G9203-256D	Non-cooled (Ta=25 °C)	50	256	12.8 × 0.5	0.9 to 1.7		4
G9203-256S	One-stage TE-cooled (Td=-10 °C)	50	256		0.9 to 1.67		4
G9204-512D	Non-cooled (Ta=25 °C)	25	512		0.9 to 1.7		1
G9204-512S	One-stage TE-cooled (Td=-10 °C)	25	512		0.9 to 1.67		1
G9211-256S	One-stage TE-cooled (Td=-10 °C)	50	256	12.8 × 0.25	0.9 to 1.67	0.95	2	1
G9212-512S		25	512	12.8 × 0.25			1
G9213-256S		50	256	12.8 × 0.5			4
G9214-512S		25	512	12.8 × 0.5			1
G9494-256D	Non-cooled (Ta=25 °C)	50	256	12.8 × 0.05	0.9 to 1.7	0.95	4	1
G9494-512D	Non-cooled (Ta=25 °C)	25	512	12.8 × 0.025	0.9 to 1.7	0.95	1	1
G10768-1024D	Non-cooled (Td=25 °C)	25	1024	25.6 × 0.1	0.9 to 1.7	0.95	±1	1
G10768-1024DB	Non-cooled (Td=25 °C)	25	1024	25.6 × 0.025	0.9 to 1.7	0.95	±1	1

Back-illuminated type

Type no.	Cooling (measurement condition)	Pixel pitch (μm)	Number of pixels	Photo-sensitive area (mm × mm)	Spectral response range λ (μm)	Photo- sensitivity S λ=λp (A/W)	Dark current ID Ta=25 °C (pA)	Defective pixels max. (%)
G11135-256DD	Non-cooled	50	256	12.8 × 0.05	0.95 to 1.7	0.82	±0.2	1
G11135-512DE		25	512	12.8 × 0.025			±0.2
G11620-256DA		50	256	12.8 × 0.5			±0.5
G11620-512DA		25	512	12.8 × 0.5
G11620-128DA		50	128	6.4 × 0.5
G11620-128DA		50	128
G11620-256DF		25	256
G11620-256SA	One-stage TE-cooled (Td=-10 °C)	50	256	12.8 × 0.5	0.95 to 1.67
G11620-256SA		50	256
G11620-512SA		25	512

Long wavelength type

Type no.	Cooling (measurement condition)	Pixel pitch (μm)	Number of pixels	Photo-sensitive area (mm × mm)	Spectral response range λ (μm)	Photo- sensitivity S λ=λp (A/W)	Dark current ID Ta=25 °C (pA)	Defective pixels max. (%)
G9205-256W	Two-stage TE-cooled (Td=-20 °C)	50	256	12.8 × 0.25	0.9 to 1.85	1.1	15	5
G9205-512W		25	512		0.9 to 1.85	1.1	15	4
G9206-256W		50	256		0.9 to 2.05	1.2	30	5
G9206-02		50	256		0.9 to 2.15			5
G9206-512W		25	512		0.9 to 2.15			4
G9207-256W		50	256		0.9 to 2.25	1.2	200	5
G9208-256W		50	256		0.9 to 2.55	1.3	500	5
G9208-512W		25	512		0.9 to 2.55	1.3	500	4

InGaAs area image sensors

InGaAs area image sensors have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and

a back-illuminated type InGaAs photodiode area array.

Type no.	Cooling (measurement condition)	Pixel pitch (μm)	Number of pixels	Photo-sensitive area (mm × mm)	Spectral response range λ (μm)	Photo- sensitivity S λ=λp (A/W)	Dark current ID Ta=25 °C (pA)	Defective pixels max. (%)
G11097-0606S	One-stage TE-cooled (Td=25 °C)	50	64 × 64	3.2 × 3.2	0.95 to 1.67	0.8	2	1
G11097-0707S	One-stage TE-cooled (Td=25 °C)		128 × 128	6.4 × 6.4	0.95 to 1.67	0.8	2
G12460-0606S	One-stage TE-cooled (Td=0 °C)		64 × 64	3.2 × 3.2	1.12 to 1.9	1.1	8 (Td=0 °C)
G12242-0707W	Two-stage TE-cooled (Td=15 °C)	20	128 × 128	2.56 × 2.56	0.95 to 1.7	0.8	0.5 (Td=15 °C)
G12242-0909W	Two-stage TE-cooled (Td=15 °C)	20	640 × 512	12.8 × 10.24	0.95 to 1.7	0.8	0.5 (Td=15 °C)	0.37

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InGaAs Photodiode Selection Guide Photodiode Technical Information