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Ultra-compact mini-spectrometer integrating MEMS and image sensor technologies : C10988MA-01

E-mail contact

+886-2-8772-8910

Features
● Thumb size: 27.6 × 16.8 × 13 mm
● Weight: 9 g
● Spectral response range: 340 to 750 nm (C10988MA-01)
                                                  640 to 1050 nm (C11708MA)
● Spectral resolution: 14 nm (C10988MA-01)
                                       20 nm (C11708MA)
● Installation into mobile measurement equipment
● Wavelength conversion factor*1 is listed on final inspection sheet.
 
Applications
C10988MA-01:
Color monitoring for printers and printing machines
Installation into large size display (Color control device)
C11708MA:
Fruit sugar content measurement / cereal taste test
Component analysis
*1: A conversion factor for converting the image sensor pixel number into a wavelength is recorded in the module. A calculation factor for converting the A/D converted count into the input light intensity is not provided.
 
Optical characteristics

Parameter

C10988MA-01

C11708MA

Unit

Spectral response range

340 to 750

640 to 1050

nm

Spectral resolution (FWHM)*2

14 max.

20 max.

nm

Wavelength reproducibility*3

-0.5 to +0.5

nm

Wavelength temperature dependence

-0.05 to +0.05

nm/°C

Spectral stray light*2 *4

-25 max.

dB

*2: Depends on the slit opening. Values were measured with the slit listed in the table “ Structure / Absolute maximum ratings”.
*3: Measured under constant light input conditions
*4: When monochromatic light of the following wavelengths is input, spectral stray light is defi ned as the ratio of the count measured at the input wavelength, to the count         measured in a region of the input wavelength ±40 nm.
      C10988MA-01: 550 nm, C11708MA: 850 nm
 
Electrical characteristics

Parameter

Min.

Typ.

Max.

Unit

Supply voltage

4.75

5

5.25

V

Power consumption

-

30

-

mW

Video rate

0.25

-

200

kHz

Output impedance

-

150*5

-

Ω

*5: An increase in the current consumption at the video output terminal also increases the chip temperature and so causes the dark current to rise. To avoid this, connect a   buffer amplifier for impedance conversion to the video output terminal so that the current flow is minimized. As the buffer amplifi er, use a JFET or CMOS input operational amplifier of optical input impedance.
 
Structure / Absolute maximum ratings

Parameter

Value

Unit

Dimensions (W × D × H)

27.6 × 16.8 × 13

mm

Weight

9

g

Number of pixels

256

pixels

Pixel size (H × V)

12.5 × 1000

μm

Image sensor

CMOS linear image sensor

-

Slit*6 (H × V)

75 × 750

μm

NA*7

0.22

-

Operating temperature*8

+5 to +50

°C

Storage temperature*8

-20 to +70

°C

*6: Entrance slit aperture size
*7: Numeric aperture (solid angle)
*8: No dew condensation
When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note:
Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.
 
 
Optical component layout (C10988MA-01)
Besides a CMOS image sensor chip integrated with an optical slit by etching, the C10988MA-01 employs a grating that is formed on a convex lens by nano-imprint. This has made the unit very compact.
 
Spectral response (typical example)
 
Spectral resolution vs. wavelength (typical example)
 
Linearity (measured with C11351, typical example)
 
Dark output vs. ambient temperature (measured with C11351, typical example)
 
Measurable optical power
 
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2)
 
Electrical connections with an external circuit
Make electrical connections to an external circuit using the lead pins.

Pin no.

Symbol

Name of pin

I/O

Description

1

CLK

Clock pulse

I

Sensor scan sync signal

2

GND

Ground

 

GND

3

NC

 

 

No connection

4

ST

Start pulse

I

Start pulse

5

NC

 

 

No connection

6

Gain

Gain

I

Image sensor: gain setting

7

EOS

End of scan

O

EOS (end of scan) signal

8

NC

 

 

No connection

9

Vdd

Supply voltage

I

Power supply of image sensor: 5 V

10

Video

Video output

O

Video output signal

 
Precation for use
● If external force is repeatedly applied to the lead pins, this may damage the lead pins.
   When installing this product in locations subject to vibration, secure it with resin or a holder, etc.
   (Recommended resin: KE347B, etc. made by Shin-Etsu Chemical Co., Ltd.)
● The sensor may be damaged by soldering, so be careful of the soldering temperature and time.
   As a general guide, fi nish soldering within 3.5 seconds at 370 °C or less when soldering by hand, or within 10 seconds at 260 °C or less when using a solder bath.
 
 
 
CMOS image sensor
Recommended terminal voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

Vdd

4.75

5

5.25

V

Gain selection terminal voltage

High gain

Gain

0

-

0.4

V

Low gain

Vdd - 0.25

Vdd

Vdd + 0.25

V

Clock pulse voltage

High level

V(CLK)

Vdd - 0.25

Vdd

Vdd + 0.25

V

Low level

0

-

0.4

V

Start pulse voltage

High level

V(ST)

Vdd - 0.25

Vdd

Vdd + 0.25

V

Low level

0

-

0.4

V

 

Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V]

Parameter

Symbol

Min.

Typ.

Max.

Unit

Clock pulse frequency

f(CLK)

1

-

800

kHz

Power consumption

High gain

P

-

-

60

mW

Low gain

-

-

60

 

Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V]

 

Parameter

Symbol

Min.

Typ.

Max.

Unit

Dark current

High gain

ID

-

0.02

0.08

pA

Low gain

-

0.02

0.08

Output offset voltage

High gain

Vo

0.15

0.35

0.55

 

Low gain

0.15

0.35

0.55

V

Feedback capacitance of charge amplifier*9

High gain

Cf

-

1.4

-

pF

Low gain

-

4.8

-

Saturation output voltage*10

High gain

Vsat

2.3

2.8

3.3

V

Low gain

1.4

1.7

2

Readout noise

High gain

Nr

-

0.3

0.5

mV rms

Low gain

-

0.2

0.4

*9: Gain=5 V (low gain), Vg=0 V (high gain)
*10: Difference from Vo
 
Timing chart
 

Parameter

Symbol

Min.

Typ.

Max.

Unit

Start pulse high period

thw(ST)

1030/f (CLK)

-

-

s

Start pulse rise and fall times

tr(ST), tf(ST)

0

20

30

ns

Clock pulse duty ratio

-

45

50

55

%

Clock pulse rise and fall times

tr(CLK), tf(CLK)

0

20

30

ns

Video delay time

tvd

-

20

-

ns

Note:
The clock pulse should be set from high to low just once when the start pulse is low. The internal shift register starts operating at this timing.
The integration time is determined by the start pulse intervals. However, since the charge integration of each pixel is carried out between the signal readout of that pixel
and the next signal readout of the same pixel, the start time of charge integration differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed.
Video output is 1/4 of the clock pulse frequency.
 
Recommended driver circuit example

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