+886-2-8772-8910
Parameter
|
Symbol
|
C13852-1350GA
|
C13852-3050GA
|
Unit
|
---|---|---|---|---|
Built-in MPPC
|
-
|
S13362-1350DG
|
S13362-3050DG
|
-
|
Effective photosensitive area
|
-
|
1.3 × 1.3
|
3 × 3
|
mm
|
Pixel pitch
|
-
|
50
|
μm
|
|
Number of pixels
|
-
|
667
|
3600
|
-
|
Parameter
|
Symbol
|
Condition
|
Value
|
Unit
|
---|---|---|---|---|
Supply voltage
|
Vs
|
|
±6
|
V
|
Operating temperature
|
Topr
|
No dew condensation*1
|
-10 to +40
|
°C
|
Storage temperature
|
Tstg
|
No dew condensation*1
|
-20 to +70
|
°C
|
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Unit |
---|---|---|---|---|---|---|
Supply voltage*2 |
+Vs |
Positive power supply |
+4.75 |
+5 |
+5.25 |
V |
-Vs |
Negative power supply |
-4.75 |
-5 |
-5.25 |
Parameter
|
Symbol
|
Condition
|
C13852-1350GA
|
C13852-3050GA
|
Unit
|
|||||
Min.
|
Typ.
|
Max.
|
Min.
|
Typ.
|
Max.
|
|||||
Spectral response range
|
λ
|
|
320 to 900
|
320 to 900
|
nm
|
|||||
Peak sensitivity wavelength
|
λp
|
|
-
|
500
|
-
|
-
|
500
|
-
|
nm
|
|
Chip temperature (setting temperature)*3 *4
|
Tchip
|
|
-
|
-20
|
-
|
-
|
-20
|
-
|
°C
|
|
Photoelectric sensitivity
|
-
|
|
0.7 × 109
|
1.0 × 109
|
1.3 × 109
|
0.7 × 109
|
1.0 × 109
|
1.3 × 109
|
V/W
|
|
Cutoff frequency
|
High band
|
fc
|
-3 dB, sinewave
|
3
|
4
|
-
|
3
|
4
|
-
|
MHz
|
Low band
|
DC
|
DC
|
-
|
|||||||
Rise time
|
tr
|
10% to 90%, 1 p.e.
|
-
|
5
|
-
|
-
|
9
|
-
|
ns
|
|
Noise equivalent power
|
NEP
|
Dark state
|
-
|
0.1
|
0.2
|
-
|
0.15
|
0.3
|
fW/Hz1/2
|
|
Minimum detection limit
|
-
|
Dark state
|
-
|
0.25
|
0.5
|
-
|
0.35
|
0.7
|
pW rms
|
|
Maximum output voltage
|
-
|
|
-
|
4.7
|
-
|
-
|
4.7
|
-
|
V
|
|
Current consumption
|
Ic
|
+5 V
|
-
|
+200
|
+1500
|
-
|
+200
|
+1500
|
mA
|
|
-5 V
|
-
|
-20
|
-40
|
-
|
-20
|
-40
|
Analog Output | |